Nanowire-mask based fabrication of high mobility and low noise graphene nanoribbon short-channel field-effect transistors

Author

Xu, G. ; Bai, J. ; Torres, C.M., Jr. ; Song, E.B. ; Tang, J. ; Zhou, Y. ; Duan, X. ; Zhang, Y. ; Huang, Y. ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA

fYear

2010

Firstpage

71

Lastpage

72

Abstract

In this work, we present a GNR fabrication method based on a 9 nanowire-mask, where the edge roughness is determined by the surface roughness of the nanowire (<;1nm)² . With four-terminal measurement setup, single layer nanoribbon (SLR) devices show μ_hole~1180cm²/(Vs), I_on/I_οff >7 and low frequency noise figure A~10^-6 at 300K. Moreover, short-channel SLR (~250nm) shows conductance quantization at 77K , and confirms that the quasi-ballistic transport properties can be achieved through this method.

Keywords

electric admittance; graphene; high electron mobility transistors; nanowires; surface roughness; edge roughness; high mobility; low noise graphene nanoribbon short-channel field-effect transistors; nanowire-mask based fabrication; single layer nanoribbon devices; surface roughness; Fabrication; Logic gates; Low-frequency noise; Pollution measurement; Quantization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551935

Filename

5551935