DocumentCode
1628712
Title
Study of LDMOS-SCR: A high voltage ESD protection device
Author
Zhang, Peng ; Wang, Yuan ; Jia, Song ; Zhang, Xing
Author_Institution
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2010
Firstpage
1722
Lastpage
1724
Abstract
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and controllable triggering voltage and fine heat dissipation capability are achieved.
Keywords
MIS devices; cooling; electrostatic discharge; silicon-on-insulator; thyristors; ESD protection device; LDMOS-SCR device; SOI; electrostatic discharge protection; heat dissipation; power device; Anodes; Discharges; Doping; Electrostatic discharge; Heating; Logic gates; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667324
Filename
5667324
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