Title :
Study of LDMOS-SCR: A high voltage ESD protection device
Author :
Zhang, Peng ; Wang, Yuan ; Jia, Song ; Zhang, Xing
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and controllable triggering voltage and fine heat dissipation capability are achieved.
Keywords :
MIS devices; cooling; electrostatic discharge; silicon-on-insulator; thyristors; ESD protection device; LDMOS-SCR device; SOI; electrostatic discharge protection; heat dissipation; power device; Anodes; Discharges; Doping; Electrostatic discharge; Heating; Logic gates; Thyristors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667324
