Title :
Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance
Author :
Zhao, Hang ; Goel, N. ; Huang, J. ; Chen, Y. ; Yum, J. ; Wang, Y. ; Zhou, F. ; Xue, F. ; Lee, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5 × 1012/cm2) in In0.7Ga0.3As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (Id) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-κ interface, and confining carriers in In0.7Ga0.3As channel using In0.52Al0.48As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ~2500 to ~5000 cm2/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high Id (55 μA/μm) due to low EOT and abrupt, vertical insitu grown III-V epitaxial junctions.
Keywords :
III-V semiconductors; MOSFET; indium compounds; quantum well devices; tunnelling; III-V epitaxial junctions; In0.52Al0.48As; In0.7Ga0.3As; mobility improvement; quantum-well MOSFET; sub-threshold swing; tunneling FET; Aluminum oxide; Indium gallium arsenide; Indium phosphide; International Electron Devices Meeting; MOSFETs; Scattering;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551938
