Title :
Development toward wafer-scale graphene RF electronics
Author :
Moon, J.S. ; Curtis, D. ; Hu, M. ; Wong, D. ; Campbell, P.M. ; Jernigan, G. ; Tedesco, J. ; VanMil, B. ; Myers-Ward, R. ; Eddy, C., Jr. ; Gaskill, D.K. ; Robinson, J. ; Fanton, M. ; Asbeck, P.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500 cm2 V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world´s first epitaxial graphene RF FETs is presented.
Keywords :
MOSFET; atomic layer deposition; electron density; epitaxial growth; field effect transistors; graphene; graphitisation; high-k dielectric thin films; silicon compounds; Al2O3; SiC; atomic-layer-deposited high-k gate dielectric layer; device fabrication; epitaxial graphene RF FET; epitaxial graphene growth; graphene FET technology; graphitization; metal gates; non-alloyed ohmic metal schemes; sheet electron carrier density; wafer-scale graphene RF electronics; Atomic layer deposition; Charge carrier processes; Epitaxial growth; FETs; Fabrication; High K dielectric materials; High-K gate dielectrics; Radio frequency; Substrates; Temperature; Graphene; High-K dielectric; MOSFET;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422991
