• DocumentCode
    1628745
  • Title

    Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs

  • Author

    Khatami, Yasin ; Krall, Michael ; Li, Hong ; Xu, Chuan ; Banerjee, Kaustav

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2010
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high ION and the high bandgap of narrow-GNR to attain low IOFF. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve ION as high as 1.3 mA/μm, ION/IOFF ratio as high as 109, and S as small as 10 mV/dec at VDD=0.5 V. Compared to the HP MOSFET with Lg=25 nm, the wide-narrow GNR T-FET exhibits 2X and 104X improvement in ION and ION/IOFF ratio at VDD=0.5 V, which makes it suitable for HP/LP applications.
  • Keywords
    MOSFET; graphene; high electron mobility transistors; low-power electronics; tunnel transistors; GNR T-FET; HP MOSFET; graphene based heterostructure tunnel-FET; low-voltage/high-performance IC; Heterojunctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551939
  • Filename
    5551939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628745