Title :
Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs
Author :
Khatami, Yasin ; Krall, Michael ; Li, Hong ; Xu, Chuan ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
The characteristics of the wide-narrow GNR T-FET were studied. The proposed device utilizes the small bandgap of wide-GNR to achieve high ION and the high bandgap of narrow-GNR to attain low IOFF. The design space for the bandgap/width of the two regions was studied. The design parameters can be optimized to achieve ION as high as 1.3 mA/μm, ION/IOFF ratio as high as 109, and S as small as 10 mV/dec at VDD=0.5 V. Compared to the HP MOSFET with Lg=25 nm, the wide-narrow GNR T-FET exhibits 2X and 104X improvement in ION and ION/IOFF ratio at VDD=0.5 V, which makes it suitable for HP/LP applications.
Keywords :
MOSFET; graphene; high electron mobility transistors; low-power electronics; tunnel transistors; GNR T-FET; HP MOSFET; graphene based heterostructure tunnel-FET; low-voltage/high-performance IC; Heterojunctions;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551939
