Title :
MOSSIM: metal oxide semiconductor device simulation package
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Abstract :
This paper discusses about the MOS device simulator developed by us, which simulates the device characteristics up to submicron channel length. It includes long channel, short channel, subthreshold field dependent mobility and punch through models
Keywords :
MIS devices; MOSFET; carrier mobility; digital simulation; semiconductor device models; software packages; MOS device simulator; MOSSIM; NMOS transistor; device characteristics; long channel; metal oxide semiconductor device simulation package; punch through models; short channel; submicron channel length; subthreshold field dependent mobility; Capacitance; Charge carrier processes; Circuit simulation; Conductors; Doping; Impurities; MOSFETs; Packaging; Subthreshold current; Threshold voltage;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498054
