DocumentCode
1628778
Title
Lateral PIN current-injected photonic crystal nanocavity light emitting diodes based on Ge quantum dots
Author
Xu, Xuejun ; Tsuboi, Toshiki ; Usami, Noritaka ; Maruizumi, Takuya ; Shiraki, Yasuhiro
Author_Institution
Adv. Res. Labs., Tokyo City Univ., Tokyo, Japan
fYear
2012
Firstpage
331
Lastpage
333
Abstract
Current-injected light emitting diodes based on Ge quantum dots in photonic crystal nanocavities are demonstrated by using lateral PIN diode structure. A sharp resonant peak with Q-factor of 1560 is obtained in the electroluminescence spectrum.
Keywords
Q-factor; electroluminescence; elemental semiconductors; germanium; light emitting diodes; nanophotonics; p-i-n diodes; photonic crystals; semiconductor quantum dots; Ge; Q-factor; electroluminescence spectrum; lateral PIN current-injected light emitting diodes; lateral PIN diode structure; photonic crystal nanocavity; quantum dots; sharp resonance; Cavity resonators; Light emitting diodes; PIN photodiodes; Photonic crystals; Q factor; Quantum dots; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324177
Filename
6324177
Link To Document