Title :
Flatband voltage tuning and EOT reduction for SiO2/HfO2/TiN gate stacks via lanthanum oxide capping layers using two different lanthanum precursors
Author :
Chiang, C.K. ; Huang, H.Y. ; Wu, C.H. ; Lin, J.F. ; Liu, C.C. ; Yang, C.L. ; Wu, J.Y. ; Wang, S.J.
Abstract :
We have investigated the precursor effect of La2O3 cap layers on Vfb tuning and EOT reduction in SiO2/HfO2/TiN gate stacks. The Vfb tuning and EOT reduction correlate with the intermixing of La2O3 and HfO2 dielectrics which forms dipoles at the lower interface between HfO2 and SiO2 IL and the diffusion of La and Hf atoms to the SiO2 IL. The use of La(fAMD)3 precursor for the La2O3 cap layer deposition has been shown being much superior to La(thd)3 due to lower ALD process temperature and shorter O3 oxidant pulse duration.
Keywords :
IV-VI semiconductors; hydrogen compounds; lanthanum compounds; leakage currents; silicon compounds; titanium compounds; tunnelling; ALD process temperature; EOT reduction; HfO2; La(fAMD)3 precursor; La(thd)3 precursor; La2O3; SiO2; TiN; flatband voltage tuning; lanthanum oxide capping layers; lanthanum precursors;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551940
