DocumentCode
1628793
Title
A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects
Author
Zhou, Xing ; Zhu, Guojun ; Srikanth, Machavolu K. ; Lin, Shihuan ; Chen, Zuhui ; Zhang, Junbin ; Wei, Chengqing
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
Firstpage
1725
Lastpage
1728
Abstract
This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects. A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.
Keywords
MOSFET; nanowires; DG FinFET; GAA nanowire MOSFET; double-gate/gate-all-around MOSFET; long/short-channel; thin/thick-body effects; unified compact model; unified regional modeling; Doping; Electric potential; Logic gates; MOSFETs; Mathematical model; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667327
Filename
5667327
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