• DocumentCode
    1628796
  • Title

    Improvement of photoluminescence from Ge Layers with Si3N4/SiO2 Stressors

  • Author

    Oda, Katsuya ; Okumura, Tadashi ; Tani, Kazuki ; Saito, Shin-ichi ; Ido, Tatemi

  • Author_Institution
    Photonics Electron. Technol. Res. Assoc. (PETRA), Kokubunji, Japan
  • fYear
    2012
  • Firstpage
    334
  • Lastpage
    336
  • Abstract
    The photoluminescence from Ge stripes increased due to the large amount of tensile strain created by Si3N4/SiO2 stressors. The low temperature deposition of Si3N4 was also effective at improving the optical properties of the Ge layer.
  • Keywords
    chemical vapour deposition; elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor epitaxial layers; silicon compounds; Ge layers; Ge-Si3N4-SiO2; low temperature deposition; optical properties; photoluminescence; stressors; tensile strain; Diffraction; Lattices; Silicon; Substrates; Tensile strain; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324178
  • Filename
    6324178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628796