Title :
Tuning the electroluminescence of n-Ge LEDs using process induced strain
Author :
Velha, Philippe ; Gallacher, Kevin ; Dumas, Derek ; Paul, Douglas J. ; Myronov, Maksym ; Leadley, David R.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ~ μW of power between 1.6 μm and ~1.8 μm, significantly larger than previous LEDs.
Keywords :
electroluminescence; elemental semiconductors; energy gap; germanium; light emitting diodes; optical tuning; Ge-Si; Ge-on-Si; LED; direct bandgap electroluminescence; emission wavelength; process induced strain; Current density; Energy measurement; Light emitting diodes; Optical wavelength conversion; Silicon; Strain; Wires;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324179
