• DocumentCode
    1628831
  • Title

    Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In0.7Ga0.3As MOSFETs

  • Author

    Zhao, Han ; Kong, Ning ; Chen, Yen-Ting ; Wang, Yanzhen ; Xue, Fei ; Zhou, Fei ; Banerjee, Sanjay K. ; Lee, Jack C.

  • Author_Institution
    Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2010
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    In this paper, InP barrier was used instead of InAlAs barrier due to its better interface quality with gate oxides. The effects of different InP barrier thicknesses on device performance were investigated. We have also deposited different ALD gate oxides (single Al2O3, HfO2 and Al2O3/HfO2 bilayer) and studied the influence of various oxides on oxide/barrier interface and device characteristics.
  • Keywords
    III-V semiconductors; MOSFET; indium compounds; ALD oxides; In0.7Ga0.3As; InP; MOSFET; barrier layer thicknesses; Aluminum oxide; Indium compounds; Indium phosphide; International Electron Devices Meeting; Logic gates; MOSFETs; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551942
  • Filename
    5551942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628831