DocumentCode
1628835
Title
Uncooled high-efficiency lasers
Author
Ring, W.S.
Author_Institution
Hewlett Packard, Ipswich, UK
fYear
1997
Firstpage
329
Lastpage
330
Abstract
In summary, we observed that the number of quantum wells and the suitable choice of the active structure enable high-efficiency uncooled InGaAsP-InP quantum well lasers to be produced without facet coatings for low-cost 1300-nm coaxial products
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1300 nm; InGaAsP-InP; active structure; high-efficiency uncooled InGaAsP-InP quantum well lasers; low-cost 1300-nm coaxial products; quantum well number; uncooled high-efficiency lasers; Distortion measurement; Fiber lasers; Indium phosphide; Intermodulation distortion; Laser noise; Optical distortion; Optical materials; Temperature dependence; Temperature distribution; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication. OFC 97., Conference on
Conference_Location
Dallas, TX
Print_ISBN
1-55752-480-7
Type
conf
DOI
10.1109/OFC.1997.719936
Filename
719936
Link To Document