Title :
A 1 watt, 3.2 VDC, high efficiency distributed power PHEMT amplifier fabricated using LTCC technology
Author :
Lei Zhao ; Pavio, A. ; Thompson, W.
Author_Institution :
Solid State Res. Center, Motorola Inc., Tempe, AZ, USA
Abstract :
A 1 watt distributed PHEMT amplifier, that operates from 800 MHz to 2.1 GHz, with a 3.2 Volt DC supply has been developed using a novel new approach. The amplifier was designed to provide high efficiency operation, targeted for broadband wireless applications. Key to the amplifier´s performance, is a novel broadband impedance matching transformer, fabricated using LTCC technology, as well as a low loss tapered drain network. The class B design has 50 /spl Omega/ terminal impedances and built-in bias decoupling.
Keywords :
HEMT circuits; UHF integrated circuits; UHF power amplifiers; distributed amplifiers; hybrid integrated circuits; impedance convertors; impedance matching; power HEMT; 1 W; 3.2 V; 800 MHz to 2.1 GHz; LTCC technology; broadband impedance matching transformer; broadband wireless applications; built-in bias decoupling; class B design; high efficiency distributed power PHEMT amplifier; low loss tapered drain network; terminal impedances; Broadband amplifiers; Circuits; Distributed amplifiers; High power amplifiers; Impedance; Network synthesis; Operational amplifiers; PHEMTs; Power amplifiers; Power transmission lines;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210601
