Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors

This paper proposes two major classes of band-to-band tunneling devices: one with an ultra thin body double gate geometry where the tunneling is completely along the transport direction and the other, where tunneling is expected to be vertical by having a pocket (halo) in the gate-to-source overlap region. In both cases it uses InAs as the channel material. The vertical tunneling structure provides more ON current due to the dual contribution of vertical and lateral tunneling and the OFF current is determined by the same physics.