Title :
Low threshold current and high efficiency of 1.3-μm MQW lasers with tapered active stripe for butt-coupling to single-mode fiber
Author :
Inaba, Yuichi ; Kito, Masahiro ; Nishikawa, Tohru ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
In conclusion, we have reported on lasing characteristics of a 1.3-μm InGaAsP strained-layer MQW lasers for butt-coupling modules, in which the active stripe horizontally tapered over almost the whole cavity. The fabricated lasers show low threshold current of 6.9 mA and high efficiency of 0.62 mW/mA with narrow beam divergence of 12~13°. These results indicate that the fabricated laser is effective to realize direct-coupling laser modules with high-coupling efficiency
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beams; laser transitions; modules; optical transmitters; quantum well lasers; 1.3-μm MQW lasers; 1300 nm; 6.9 mA; InGaAsP; InGaAsP strained-layer MQW lasers; active stripe; butt-coupling; butt-coupling modules; direct-coupling laser modules; fabricated lasers; high efficiency; high-coupling efficiency; horizontally tapered; lasing characteristics; low threshold current; narrow beam divergence; single-mode fiber coupling; tapered active stripe; whole cavity; Electron optics; Fiber lasers; Laser beams; Optical fiber communication; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current; Transformers; Waveguide lasers;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719937
