DocumentCode
1628892
Title
Tellurium δ-doped 120nm AlSb/InAs HEMTs: towards sub-100mV electronics
Author
Roelens, Y. ; Olivier, A. ; Desplanque, L. ; Noudeviwa, A. ; Danneville, F. ; Wichmann, N. ; Wallart, X. ; Bollaert, S.
Author_Institution
IEMN, Univ. de Lille I, Villeneuve-d´´Ascq, France
fYear
2010
Firstpage
53
Lastpage
54
Abstract
This paper discusses 120nm AlSb/InAs HEMTs operating at ultra low drain. HEMT is fabricated with ohmic contact evaporation and Schottky T-gates realization. A deep mesa isolation is used to remove completely the buffer leading to air-bridge gate.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; high electron mobility transistors; indium compounds; ohmic contacts; tellurium; δ-doping; AlSb-InAs:Te; Schottky T-gates realization; air-bridge gate; deep mesa isolation; ohmic contact evaporation; size 120 nm; voltage 100 mV; Cutoff frequency; Frequency measurement; Gain; HEMTs; Logic gates; MODFETs; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551945
Filename
5551945
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