• DocumentCode
    1628935
  • Title

    Low temperature crystallization of highly textured GeSn thin films on SiO2 for 3D photonic integration

  • Author

    Li, Haofeng ; Salas, Alan ; Wang, Xiaoxin ; Liu, Jifeng

  • Author_Institution
    Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
  • fYear
    2012
  • Firstpage
    346
  • Lastpage
    348
  • Abstract
    We report a highly (111)-textured Ge0.9Sn0.1 thin film fabricated on SiO2 at 464°C. Incorporating Sn into Ge significantly reduces the crystallization temperature and red-shifts the direct band gap to ~0.5 eV, approaching indirect-to-direct gap transition.
  • Keywords
    crystallisation; energy gap; germanium alloys; metallic thin films; red shift; surface texture; tin alloys; (111)-textured thin films; 3D photonic integration; GeSn; SiO2; indirect-to-direct gap transition; low temperature crystallization; red-shifts; temperature 464 degC; Annealing; CMOS integrated circuits; Crystallization; Photonics; Silicon; Tin; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324182
  • Filename
    6324182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628935