Title :
Power and linearity performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications
Abstract :
This paper describes the performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications. In particular, the linearity of the distributed amplifier is considered. The compression point, the second and third harmonics, and the third order intercept point have been measured over different bias conditions. At nominal bias, the amplifier delivers a P1dB of 20 dBm and a TOI of 30 dBm up to 20 GHz. This amplifier can achieve simultaneously some of the best results published in the literature.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; distributed amplifiers; gallium arsenide; indium compounds; instrumentation amplifiers; integrated circuit design; linearisation techniques; 20 GHz; InGaP-GaAs; TOI; bias conditions; cascode InGaP/GaAs HBT distributed amplifier; compression point; instrument applications; linearity performance; power performance; second harmonics; small signal performance; third harmonics; third order intercept point; Bandwidth; Capacitors; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Linearity; Microwave technology; Power measurement; Power transmission lines;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210605
