A W-band ultra low noise amplifier MMIC using GaAs pHEMT

Author

Tanahashi, N. ; Kanaya, K. ; Matsuzuka, T. ; Katoh, I. ; Notani, Y. ; Ishida, T. ; Oku, T. ; Ishikawa, T. ; Komaru, M. ; Matsuda, Y.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

3

fYear

2003

Firstpage

2225

Abstract

This paper presents a newly developed 76 GHz three-stage LNA for automotive radar systems. The LNA utilizes multi band rejection filter type stabilizing circuits to achieve good noise figure together with good stability. The operating bias condition was carefully chosen to obtain low temperature dependence of gain. As a result, the LNA delivers a noise figure of 3.5 dB typically, small temperature dependence of gain of -0.016 dB/deg.C and high return loss using a highly conventional 0.19 /spl mu/m T-shaped gate AlGaAs/InGaAs/GaAs pHEMT process.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; circuit stability; field effect MIMIC; indium compounds; integrated circuit noise; millimetre wave amplifiers; road vehicle radar; 0.19 micron; 3.5 dB; 76 GHz; 76 GHz three-stage LNA; AlGaAs-InGaAs-GaAs; GaAs; GaAs pHEMT; T-shaped gate AlGaAs/InGaAs/GaAs pHEMT process; W-band ultra low noise amplifier MMIC; automotive radar systems; high return loss; multi band rejection filter type stabilizing circuits; noise figure; operating bias condition; small gain temperature dependence; stability; Automotive engineering; Circuit noise; Filters; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Radar; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210607

Filename

1210607