Title :
A 38/77 GHz MMIC transmitter chip set for automotive applications
Author :
Udomoto, J. ; Matsuzuka, T. ; Chaki, S. ; Kanaya, K. ; Katoh, T. ; Notani, Y. ; Hisaka, T. ; Oku, T. ; Ishikawa, T. ; Komaru, M. ; Matsuda, Y.
Author_Institution :
High Frequency & Opt. Semicond. Div, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
This paper describes the successful development of 38/77 GHz transmit MMICs for automotive applications. They consist of a 38 GHz amplifier, a frequency doubler, and a 77 GHz power amplifier. These amplifiers achieve output powers of 16 dBm at 38 GHz and 15 dBm at 76.5 GHz at 1 dB gain compression point. The output power of the 77 GHz amplifier is one of the highest delivered by a single chip MMIC at 76.5 GHz. The frequency doubler delivers an output power of 5.7 dBm at 76.5 GHz. These results are promising for automotive applications in the W-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC power amplifiers; aluminium compounds; field effect MIMIC; frequency multipliers; gallium arsenide; indium compounds; millimetre wave frequency convertors; radar transmitters; road vehicle radar; 1 dB gain compression point; 38 GHz; 38 GHz amplifier; 38/77 GHz MMIC transmitter chip set; 77 GHz; 77 GHz power amplifier; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMT MMIC technology; GaAs; GaAs substrate; W-band; automotive applications; frequency doubler; millimeter automotive radar systems; output powers; pHEMT; single chip MMIC; Automotive applications; Circuits; Frequency; HEMTs; MMICs; Optical amplifiers; PHEMTs; Power amplifiers; Radar; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210608
