Title :
Enhanced spin injection into single layer graphene with atomically smooth MgO barrier
Author :
Han, Wei ; Pi, K. ; McCreary, K.M. ; Li, Yan ; Kawakami, R.K.
Author_Institution :
Dept. of Phys. & Astron., Univ. of California, Riverside, CA, USA
Abstract :
Atomically smooth MgO barrier on SLG and tunneling spin injection into SLG have been achieved. A large non-local MR of 130 Ω with a large spin injection efficiency of 31% is reported. These achievements are important advances for graphene spintronics.
Keywords :
graphene; magnesium compounds; magnetoelectronics; spin polarised transport; MgO; atomically smooth barrier; enhanced spin injection; graphene spintronics; single layer graphene; tunneling spin injection; Electrodes;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551950
