Electric field control of spin precession in a spin-injected Field Effect Transistor

In conclusion, two decades ago Datta and Das proposed an experiment involving spin injection, detection, and spin precession caused by a gate voltage and special relativistic effects on ballistic electrons in a 2DES. We confirmed their predictions using an InAs SQW with a spin-orbit interaction so large that a gate voltage of a few volts can modulate the Rashba field by several Tesla. The importance to Spintronics, which proposes the use of both spin and charge as state variables, is the demonstration that spin orientation can be modulated by voltage, a parameter normally associated with charge.