DocumentCode
1629113
Title
Self-aligned microbonded Ge/Si PIN waveguide photodetectors
Author
Tseng, Chih-Kuo ; Tian, Jhong-Da ; Hung, Wei-Cheng ; Ku, Kai-Ning ; Tseng, Chih-Wei ; Liu, Yung-Sheng ; Na, Neil ; Lee, Ming-Chang M.
Author_Institution
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2012
Firstpage
1
Lastpage
3
Abstract
A cost-effective process using self-aligned microbonded Ge-beams on silicon waveguides is presented. Heterojunction photodetectors featuring low dark-current of 0.7uA (-2V) and high turn-on current of 10.8 mA (+3V) are demonstrated. The operation bandwidth is 11-16GHz.
Keywords
Ge-Si alloys; elemental semiconductors; optical waveguides; photodetectors; silicon; Ge-Si; PIN waveguide photodetectors; bandwidth 11 GHz to 16 GHz; current 0.7 muA; current 10.8 mA; dark current; heterojunction photodetectors; microbonding; self-alignment; Bandwidth; Heterojunctions; Optical waveguides; Photodetectors; Silicon; Strips; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324188
Filename
6324188
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