Title :
Self-aligned microbonded Ge/Si PIN waveguide photodetectors
Author :
Tseng, Chih-Kuo ; Tian, Jhong-Da ; Hung, Wei-Cheng ; Ku, Kai-Ning ; Tseng, Chih-Wei ; Liu, Yung-Sheng ; Na, Neil ; Lee, Ming-Chang M.
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A cost-effective process using self-aligned microbonded Ge-beams on silicon waveguides is presented. Heterojunction photodetectors featuring low dark-current of 0.7uA (-2V) and high turn-on current of 10.8 mA (+3V) are demonstrated. The operation bandwidth is 11-16GHz.
Keywords :
Ge-Si alloys; elemental semiconductors; optical waveguides; photodetectors; silicon; Ge-Si; PIN waveguide photodetectors; bandwidth 11 GHz to 16 GHz; current 0.7 muA; current 10.8 mA; dark current; heterojunction photodetectors; microbonding; self-alignment; Bandwidth; Heterojunctions; Optical waveguides; Photodetectors; Silicon; Strips; Substrates;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324188
