DocumentCode :
1629153
Title :
Sub-100 µm, 40 Gb/s photonic crystal silicon optical modulators
Author :
Nguyen, Hong C. ; Hashimoto, Satoshi ; Shinkawa, Mizuki ; Baba, Toshihiko
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear :
2012
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate a 90 μm, 40 Gb/s silicon MZI modulator, exploiting large group index (>;30) slow-light photonic crystal phase-shifters at 5.3 Vpp drive voltage. We also demonstrate a 50 μm device with 12.5 nm bandwidth.
Keywords :
Mach-Zehnder interferometers; elemental semiconductors; optical modulation; optical phase shifters; photonic crystals; silicon; slow light; Si; bit rate 40 Gbit/s; drive voltage; group index; photonic crystal silicon optical modulators; silicon MZI modulator; size 100 mum; size 50 mum; size 90 mum; slow-light photonic crystal phase-shifters; Bandwidth; Optical attenuators; Optical modulation; Phase modulation; Photonic crystals; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324189
Filename :
6324189
Link To Document :
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