Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric

Author

Ali, A. ; Madan, H.S. ; Kirk, A.P. ; Wallace, R.M. ; Zhao, D.A. ; Mourey, D.A. ; Hudait, M. ; Jackson, T.N. ; Bennett, B.R. ; Boos, J.B. ; Datta, S.

Author_Institution

Penn State Univ., University Park, PA, USA

fYear

2010

Firstpage

27

Lastpage

30

Abstract

This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al₂O₃ dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al₂O₃ dielectric using admittance spectroscopy and XPS analysis.

Keywords

Fermi level; III-V semiconductors; MIS devices; MOS capacitors; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; high-k dielectric thin films; passivation; plasma deposition; Al₂O₃; C-V characteristics; GaSb; MOS-HEMT; XPS analysis; admittance spectroscopy; capacitance-voltage characteristics; complementary logic operation; n-type MOS capacitors; p-type MOS capacitors; plasma enhanced ALD; surface chemistry; surface passivation; Epitaxial growth; Gold; Indium gallium arsenide; Lead; Nickel;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551954

Filename

5551954