Numerical simulation of transient heat conduction in nanoscale Si devices

Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n⁺-n-n⁺ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO₂ systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.