DocumentCode :
1629391
Title :
Performance and reliability of high-power lasers between 900-990 nm
Author :
Li, Benjamin ; Parke, Ross A. ; Jackson, Gordon S. ; Craig, Richard R.
Author_Institution :
SDL Inc., San Jose, CA, USA
fYear :
1997
Firstpage :
352
Lastpage :
353
Abstract :
In conclusion, 100-μm broad area InGaAs quantum well lasers for fibre laser pumping with peak cw power exceeding 8 W and high power operating up to 90°C have been demonstrated. Preliminary lifetest data suggest that reliable 100-μm broad area lasers are possible for power between 1~2 watts. These lasers will fulfill the lifetime demand of telecommunication applications because of generous power and temperature margins
Keywords :
gallium arsenide; indium compounds; infrared sources; laser reliability; laser transitions; life testing; optical communication equipment; optical pumping; quantum well lasers; semiconductor device reliability; semiconductor device testing; telecommunication network reliability; 1 to 2 W; 100 mum; 90 C; 900 to 990 nm; InGaAs; broad area InGaAs quantum well lasers; fibre laser pumping; generous power margins; high power; high-power laser reliability; lifetest data; lifetime demand; peak cw power; reliable 100-μm broad area lasers; telecommunication applications; temperature margins; Fiber lasers; Performance evaluation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Stimulated emission; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
Type :
conf
DOI :
10.1109/OFC.1997.719957
Filename :
719957
Link To Document :
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