Title :
Quantum transport and electron-phonon interaction in nanoscale MOSFETs
Author :
Mori, Nobuya ; Minari, Hideki ; Mil´nikov, Genaddy ; Kamakura, Yoshinari
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metal-oxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in p-type nanowire transistors are also investigated.
Keywords :
MOSFET; ballistic transport; electron-phonon interactions; nanoelectronics; nanowires; discrete impurity; electron-phonon interaction; interface roughness; nanoscale MOSFET; phonon scattering; quantum transport; Logic gates; MOSFETs; Nanoscale devices; Phonons; Scattering; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667351
