• DocumentCode
    1629398
  • Title

    Quantum transport and electron-phonon interaction in nanoscale MOSFETs

  • Author

    Mori, Nobuya ; Minari, Hideki ; Mil´nikov, Genaddy ; Kamakura, Yoshinari

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2010
  • Firstpage
    1757
  • Lastpage
    1760
  • Abstract
    Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metal-oxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in p-type nanowire transistors are also investigated.
  • Keywords
    MOSFET; ballistic transport; electron-phonon interactions; nanoelectronics; nanowires; discrete impurity; electron-phonon interaction; interface roughness; nanoscale MOSFET; phonon scattering; quantum transport; Logic gates; MOSFETs; Nanoscale devices; Phonons; Scattering; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667351
  • Filename
    5667351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629398