Title :
Effect of output buffer design on 40Gb/s limiting amplifiers designed with InP HBT technology
Author :
Georgiou, G. ; Houtsma, V. ; Pullela, R. ; Lee, Q. ; Leven, A. ; Weiner, J.S. ; Kopf, R. ; Tate, A. ; Yang, Y. ; Baeyens, Y. ; Chen, Y.-K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
An InP-based HBT technology with peak f/sub t/ /spl sim/ 135GHz is used to design and fabricate several 3-stage limiting amplifier with high margin at >40Gbps. Feedback techniques are used in all design for the first two stages. The different designs compare the conventional (resistive load) differential pair output buffer with a feedback (active load) transimpedance output buffer. The common differential specifications are S11 and S22 < -15dB and S21 > 25dB with output swing >500mV. Results show that the design with the negative feedback output buffer has a lower small-signal bandwidth but a larger 40Gb/s eye opening than design with the conventional differential pair output buffer.
Keywords :
III-V semiconductors; S-parameters; bipolar transistor circuits; buffer circuits; differential amplifiers; feedback amplifiers; heterojunction bipolar transistors; indium compounds; limiters; 135 GHz; 40 Gbit/s; InP; InP HBT technology; S-parameters; active load; differential pair output buffer; eye opening; feedback transimpedance output buffer; limiting amplifier; resistive load; small-signal bandwidth; Bandwidth; Circuit synthesis; Fabrication; Gold; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Optical reflection; Output feedback; Signal design;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210618
