Title :
A fast testing of electromigration immunity using noise measurement technique
Author :
Komori, Junko ; Takata, Yoshifumi ; Mitsuhashi, Jun-ichi ; Tsubouchi, Natsurou
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f2) are performed on a test pattern with stress gradients under high current density up to 2×107 A/cm 2. Each of the measurements is completed within a few minutes. The temperature of the interconnections (200°C for a current density of 2×107 A/cm2) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation
Keywords :
electric noise measurement; electromigration; integrated circuit testing; metallisation; 1/f noise; 200 degC; current noise spectrum; electromigration immunity; fast testing; high current density; high-speed testing; interconnection temperature; noise measurement technique; stress gradients; test pattern; void formation; wafer-level evaluation technique; Current density; Current measurement; Electromigration; Integrated circuit interconnections; Noise measurement; Optical microscopy; Optical noise; Temperature; Testing; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161753
