Channel and contact length scaling in carbon nanotube transistors

In summary, results are presented on the effects of L_g and CL scaling in CNTFETs. To consider CNTFETs for a high performance technology, any limitations related to their aggressive scaling must be understood. Devices with excellent and reproducible performance were fabricated with L_g and CL as small as 15 and 20 nm, respectively-projected achievable pitch of 45 nm, which would be suitable beyond the 8 nm technology node. In fact, the smallest CNTFET to date is demonstrated having CL ≈ L_g ≈ 20 nm with superb performance.