DocumentCode :
1629626
Title :
Active Gate Control for Current Balancing in Paralleled IGBT Modules in a Solid State Modulator
Author :
Bortis, D. ; Biela, J. ; Kolar, J.W.
Author_Institution :
ETH Zurich, Zurich
fYear :
2007
Firstpage :
791
Lastpage :
791
Abstract :
Summary form only given. In the paper an active gate control for paralleled IGBTs in a solid state modulator is presented. There, the focus is put on the rising and falling edges and the overshoot which are very important for klystron applications. For controlling the current sharing and providing fast switching also a high dynamic gate drive is presented in the paper. There, a PCB integrated Rogowski current probe is used which has a high bandwidth and enables a low inductive construction required for the pulse modulator.
Keywords :
insulated gate bipolar transistors; modulators; power semiconductor switches; pulsed power switches; PCB integrated Rogowski current probe; active gate control; current balancing; klystron application; paralleled IGBT module; pulse modulator; pulsed power; solid state modulator; Current measurement; Insulated gate bipolar transistors; Laboratories; Power electronics; Probes; Pulse modulation; Solid state circuits; Switches; Thyratrons; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location :
Albuquerque, NM
ISSN :
0730-9244
Print_ISBN :
978-1-4244-0915-0
Type :
conf
DOI :
10.1109/PPPS.2007.4346097
Filename :
4346097
Link To Document :
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