Title :
Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs
Author :
Thareja, G. ; Chopra, S. ; Adams, B. ; Patil, N. ; Ta, Y. ; Porshnev, P. ; Kim, Y. ; Moffatt, S. ; Loftis, D. ; Brennan, R. ; Goodman, G. ; Abdelrehim, I. ; Saraswat, K. ; Nishi, Y.
Author_Institution :
Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
For the first time, ultra shallow junctions (xj <; 10nm) are demonstrated using Plasma Immersion Ion Implantation for both n-type and p-type dopants in Ge. High electrical activation (>1×1020 cm-3) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO2 interfacial layer for gate dielectric, which provides substrate orientation independent Dit and mobility enhancement for Ge high-k N/P MOSFETs.
Keywords :
MOSFET; antimony; arsenic; boron; dielectric materials; dielectric thin films; electron mobility; elemental semiconductors; germanium; germanium compounds; laser materials processing; phosphorus; plasma immersion ion implantation; semiconductor doping; Ge:As; Ge:B; Ge:P; Ge:Sb; GeO2; GeO2 interfacial layer; MOSFET; dopant activation; gate dielectric; laser thermal processing; n-type dopant; p-type dopant; plasma immersion ion implantation; ultrashallow junction; High K dielectric materials; Logic gates; MOSFET circuits; MOSFETs;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551970
