DocumentCode :
1629673
Title :
High efficiency X-band class-E GaN MMIC high-power amplifiers
Author :
Moon, J.S. ; Moyer, H. ; Macdonald, P. ; Wong, D. ; Antcliffe, M. ; Hu, M. ; Willadsen, P. ; Hashimoto, P. ; McGuire, C. ; Micovic, M. ; Wetzel, M. ; Chow, D.
Author_Institution :
HRL Labs. LLC, CA, USA
fYear :
2012
Firstpage :
9
Lastpage :
12
Abstract :
We have demonstrated 8.5-11.5 GHz class-E MMIC high-power amplifiers (HPAs) with a peak power-added-efficiency (PAE) of 61% and drain efficiency (DE) of 70% with an output power of 3.7 W in a continuous-mode operation. At 5 W output power, PAE and DE of 58% and 67% are measured, respectively, which implies MMIC power density of 5 W/mm at Vds = 30 V. The peak gain is 11 dB, with an associated gain of 9 dB at the peak PAE. At an output power of 9 W, DE and PAE of 59% and 51 % were measured, respectively. In order to improve the linearity, we have designed and simulated X-band class-E MMIC PAs similar to a Doherty configuration. The Doherty-based class-E amplifiers show an excellent cancellation of a third-order intermodulation product (IM3), which improved the simulated two-tone linearity C/IM3 to >; 50 dBc.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; Doherty configuration; Doherty-based class-E amplifier; GaN; MMIC power density; continuous-mode operation; drain efficiency; frequency 8.5 GHz to 11.5 GHz; high efficiency X-band class-E MMIC high-power amplifier; peak power-added-efficiency; power 3.7 W to 9 W; third-order intermodulation product; voltage 30 V; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power generation; Efficiency; GaN; Linearity; X-band; class-E; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1119-0
Type :
conf
DOI :
10.1109/PAWR.2012.6174909
Filename :
6174909
Link To Document :
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