DocumentCode :
1629733
Title :
Ultra-low power phase change memory with carbon nanotube interconnects
Author :
Xiong, Feng ; Liao, Albert ; Estrada, David ; Pop, Eric
Author_Institution :
Micro & Nanotechnol. Lab., Univ. of Illinois, Urbana, IL, USA
fYear :
2010
Firstpage :
253
Lastpage :
254
Abstract :
In this paper, we have shown that CNT (carbon nanotubes) electrodes enable control of extremely small, ~10 nm volumes of phase change materials (e.g. GST - Ge2Sb2Te5). Reversible SET and RESET programming currents as low as 1-10 μA can be achieved, two orders of magnitude lower than state-of-the-art PCM devices.
Keywords :
carbon nanotubes; germanium compounds; phase change materials; phase change memories; Ge2Sb2Te5; PCM devices; RESET programming; carbon nanotube electrodes; carbon nanotube interconnects; reversible SET programming; ultra-low power phase change memory; Electric breakdown; Nanoscale devices; Phase change materials; Programming; Resistance; Switches; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2010.5551972
Filename :
5551972
Link To Document :
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