DocumentCode
1629775
Title
Self-heating effects in analog Bulk and SOI CMOS circuits
Author
Roy, Urmimala ; Sangiorgi, Enrico ; Fiegna, Claudio
Author_Institution
ARCES-DEIS, Univ. of Bologna, Cesena, Italy
fYear
2010
Firstpage
1782
Lastpage
1785
Abstract
In this work, we study the impact of device self-heating on Bulk and double-gate silicon-on-insulator (DGSOI) technologies using self-consistent electrothermal (ET) simulations. Device characteristics of Bulk and DGSOI MOSFETs have been studied to estimate device performance and the impact of self-heating on the same. Self-heating effect (SHE) on the AC performance has also been studied for these two technologies.
Keywords
CMOS analogue integrated circuits; MOSFET; circuit simulation; semiconductor device models; silicon-on-insulator; DGSOI MOSFET; ET simulation; SOI CMOS circuit; analog circuit; bulk MOSFET; double-gate silicon-on-insulator; self-consistent electrothermal simulation; self-heating effect; Admittance; Heating; Logic gates; MOSFETs; Performance evaluation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667366
Filename
5667366
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