DocumentCode
1629791
Title
A 1.8V to 10V CMOS level shifter for RFID transponders
Author
Liu, Junhua ; Ye, Le ; Deng, Zhixin ; Zhao, Jinshu ; Liao, Huailin
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2010
Firstpage
491
Lastpage
493
Abstract
A 1.8 V-to-10 V high-voltage tolerant level shifter (HVT level shifter) is presented in this paper. This new topology of HVT level shifter makes all the transistors working in safe operating region, and consequently greatly enhances the circuit´s reliability. It has been fabricated in 0.18 μm CMOS process, and successfully integrated in an embedded EEPROM memory with 10 V programming/erasing voltages in the passive UHF RFID transponders.
Keywords
CMOS integrated circuits; EPROM; integrated circuit reliability; radiofrequency identification; radiofrequency integrated circuits; transponders; CMOS level shifter; CMOS process; RFID transponders; circuit reliability; embedded EEPROM memory; high-voltage tolerant level shifter; size 0.18 mum; voltage 1.8 V to 10 V; EPROM; Logic gates; Programming; Radiofrequency identification; Reliability; Topology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667367
Filename
5667367
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