Title :
A 1.8V to 10V CMOS level shifter for RFID transponders
Author :
Liu, Junhua ; Ye, Le ; Deng, Zhixin ; Zhao, Jinshu ; Liao, Huailin
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A 1.8 V-to-10 V high-voltage tolerant level shifter (HVT level shifter) is presented in this paper. This new topology of HVT level shifter makes all the transistors working in safe operating region, and consequently greatly enhances the circuit´s reliability. It has been fabricated in 0.18 μm CMOS process, and successfully integrated in an embedded EEPROM memory with 10 V programming/erasing voltages in the passive UHF RFID transponders.
Keywords :
CMOS integrated circuits; EPROM; integrated circuit reliability; radiofrequency identification; radiofrequency integrated circuits; transponders; CMOS level shifter; CMOS process; RFID transponders; circuit reliability; embedded EEPROM memory; high-voltage tolerant level shifter; size 0.18 mum; voltage 1.8 V to 10 V; EPROM; Logic gates; Programming; Radiofrequency identification; Reliability; Topology; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667367
