Title :
A proposal of trapezoid mesa trench MOS barrier Schottky rectifier
Author :
Li, Weiyi ; Ru, Guo-Ping ; Jiang, Yu-Long ; Ruan, Gang
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I-V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as conventional planar Schottky rectifier.
Keywords :
Schottky diodes; leakage currents; power semiconductor diodes; rectifiers; 2D numerical simulations; Schottky rectifier; breakdown voltage; leakage current; trapezoid mesa trench MOS barrier; Electric fields; Leakage current; Power semiconductor devices; Proposals; Rectifiers; Schottky barriers; Software;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667369
