DocumentCode
1629848
Title
A proposal of trapezoid mesa trench MOS barrier Schottky rectifier
Author
Li, Weiyi ; Ru, Guo-Ping ; Jiang, Yu-Long ; Ruan, Gang
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
1789
Lastpage
1791
Abstract
We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I-V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as conventional planar Schottky rectifier.
Keywords
Schottky diodes; leakage currents; power semiconductor diodes; rectifiers; 2D numerical simulations; Schottky rectifier; breakdown voltage; leakage current; trapezoid mesa trench MOS barrier; Electric fields; Leakage current; Power semiconductor devices; Proposals; Rectifiers; Schottky barriers; Software;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667369
Filename
5667369
Link To Document