Title :
Surface Tunneling Currents in Reverse Biased Narrow Bandgap P-N Junction
Author_Institution :
Department of Electrical Engineering, Technion - Israel Institute of Technology
Keywords :
Current measurement; Electric breakdown; Insulation; Metal-insulator structures; P-n junctions; Photonic band gap; Predictive models; Semiconductor diodes; Tunneling; Voltage;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
DOI :
10.1109/EEIS.1989.720011
