Title :
Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs
Author :
Li, Guowang ; Zimmermann, Tom ; Cao, Yu ; Lian, Chuanxin ; Xing, Xiu ; Wang, Ronghua ; Fay, Patrick ; Xing, Huili Grace ; Jena, Debdeep
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this paper, device performance of high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs with ALD Al2O3 dielectric is reported. Employing different gate metals, the threshold voltages were shifted by -0.8 V in 0.5-μm-long HEMTs, which indicates an unpinned Fermi level at the ALD Al2O3/ Al0.72Ga0.28N interface. With lower contact resistances, high Al AlGaN HEMTs are well suited for further lateral and vertical scaling to push towards high frequency E/D-mode performance.
Keywords :
Fermi level; III-V semiconductors; alumina; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; wide band gap semiconductors; work function; Al0.72Ga0.28N-AlN-GaN; Al2O3; HEMT; contact resistance; gate metals; high frequency E/D-mode; size -0.5 mum; threshold voltages; unpinned Fermi level; work-function engineering; Artificial intelligence; Gallium nitride; Gold; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551983
