• DocumentCode
    1630019
  • Title

    Simplified Model of 1/f noise in Mos Transistor Valid in All Regions of Inversion

  • Author

    Kornfeld, A. ; Altschul, V. ; Shacham-Diamand, Y.

  • Author_Institution
    Department of Electrical Engineering, Technion - Israel institute of Technology
  • fYear
    1989
  • Firstpage
    1
  • Lastpage
    4
  • Keywords
    1f noise; Charge measurement; Current measurement; Electron traps; Equations; Fluctuations; MOSFETs; Petroleum; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
  • Type

    conf

  • DOI
    10.1109/EEIS.1989.720013
  • Filename
    720013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630019