Title :
Simplified Model of 1/f noise in Mos Transistor Valid in All Regions of Inversion
Author :
Kornfeld, A. ; Altschul, V. ; Shacham-Diamand, Y.
Author_Institution :
Department of Electrical Engineering, Technion - Israel institute of Technology
Keywords :
1f noise; Charge measurement; Current measurement; Electron traps; Equations; Fluctuations; MOSFETs; Petroleum; Tunneling; Voltage;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
DOI :
10.1109/EEIS.1989.720013
