• DocumentCode
    1630030
  • Title

    Temperature dependence of Ge/Si avalanche photodiodes

  • Author

    Dai, Daoxin ; Bowers, John E. ; Lu, Zhiwen ; Campbell, Joe C. ; Kang, Yimin

  • Author_Institution
    ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2010
  • Firstpage
    231
  • Lastpage
    232
  • Abstract
    In summary, we have presented the experimental results for characterizing the temperature dependence of Ge/Si SACM APDs. The dark current increases by a factor 2 every 10οC at Vbias= -15V. Due to the temperature dependence of the ionization rate, the gain G increases by around 1.3 times for a temperature reduction of ΔT=10οC. The measured GBP is over 400GHz and The GBP is not sensitive to the temperature change ranging from 10οC to 60°C.
  • Keywords
    avalanche photodiodes; germanium; ionisation; silicon; GBP; Ge-Si; SACM APD; avalanche photodiodes; dark current; ionization rate; temperature 10 C; temperature dependence; temperature reduction; Dark current; Photoconductivity; Silicon; Temperature; Temperature dependence; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551985
  • Filename
    5551985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630030