DocumentCode
1630032
Title
A Model of Most Drain Current in Moderate Inversion
Author
Altschul, V. ; Schacham-Diamand, Y.
Author_Institution
Department of Electrical Engineering, Technion, Israel
fYear
1989
Firstpage
1
Lastpage
4
Keywords
Charge measurement; Computational complexity; Computational modeling; Current measurement; Doping; Equations; MOS devices; MOSFETs; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
Type
conf
DOI
10.1109/EEIS.1989.720014
Filename
720014
Link To Document