Title :
DC characteristics of high performance self-aligned bulk-Si dual-channel source/drain-tied MOSFETs
Author :
Fan, Yi-Hsuan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
We present a novel bulk-Si dual-channel source/drain-tied (DCSDT) MOSFET with the multiple epitaxial growth of SiGe/Si layers, and selective SiGe removal to form the block oxide island (BOI). Based on the simulations, the SDT scheme achieves better DC characteristics than body-tied (BT) scheme such as: Ion (20% increased), Ioff (71% reduced), Rsd (5.3% decreased), S.S. (19% improved), DIBL (35% reduced), τ (15.5% reduced), 1/τ (17.1% increased), and significantly improved thermal stability. Furthermore, the designed process is totally self-aligned, which is a promising candidate for future device scaled down.
Keywords :
Ge-Si alloys; MOSFET; epitaxial growth; silicon; thermal stability; SiGe-Si; block oxide island; body-tied scheme; epitaxial growth; self-aligned dual-channel source-drain-tied MOSFET; thermal stability; Logic gates; MOSFETs; Silicon germanium; Stability analysis; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667375
