DocumentCode
1630126
Title
Forward gated-diode method for extracting gate oxide thickness and body doping concentration
Author
Zhang, Chenfei ; Ma, Chenyue ; He, Frank ; Zhang, Xiufang ; Liu, Zhiwei
Author_Institution
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear
2010
Firstpage
1674
Lastpage
1676
Abstract
In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (R-G) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation data.
Keywords
MIS devices; semiconductor doping; ISE-Dessis; MOS device; body doping concentration; forward gated-diode method; gate oxide thickness extraction; recombination-generation current; Charge carrier processes; Doping; Electric potential; Helium; Logic gates; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667378
Filename
5667378
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