Title :
Forward gated-diode method for extracting gate oxide thickness and body doping concentration
Author :
Zhang, Chenfei ; Ma, Chenyue ; He, Frank ; Zhang, Xiufang ; Liu, Zhiwei
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (R-G) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation data.
Keywords :
MIS devices; semiconductor doping; ISE-Dessis; MOS device; body doping concentration; forward gated-diode method; gate oxide thickness extraction; recombination-generation current; Charge carrier processes; Doping; Electric potential; Helium; Logic gates; Semiconductor process modeling; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667378
