Analytical model of GaN MESFETs for high power and microwave frequency applications

Author

Shanta, A.S. ; Hossain, D.B. ; Huq, T.R. ; Mahmood, R. ; Islam, M.S.

Author_Institution

Dept. of Electr. & Electron. Eng., BRAC Univ., Dhaka, Bangladesh

Volume

1

fYear

2012

Firstpage

28

Lastpage

31

Abstract

A simple physics based model for Gallium Nitride (GaN) Metal Semiconductor Field Effect Transistor (MESFET) suitable for microwave frequency applications is presented. The developed analytical channel potential model can be used for short channel MESFETs with some modifications and assumptions. Analytical models for I-V characteristics, C-V characteristics, transconductance and optimum noise figure of GaN MESFET are presented. The effects of parasitic resistances and gate length modulation on these models have been studied. The models developed in this paper will be very helpful to understand the device behavior in nanometer regime for future applications.

Keywords

III-V semiconductors; gallium compounds; microwave field effect transistors; power MESFET; wide band gap semiconductors; C-V characteristic; GaN; I-V characteristic; analytical channel potential model; gate length modulation; high power frequency application; metal semiconductor field effect transistor; microwave frequency application; nanometer device behavior; optimum noise figure; parasitic resistance effect; short channel MESFET; simple physics based model; transconductance noise figure; Analytical models; Capacitance; Gallium nitride; Logic gates; MESFETs; Noise figure; Transconductance; Analytical model; GaN; MESFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation & Measurement, Sensor Network and Automation (IMSNA), 2012 International Symposium on

Conference_Location

Sanya

Print_ISBN

978-1-4673-2465-6

Type

conf

DOI

10.1109/MSNA.2012.6324509

Filename

6324509