• DocumentCode
    1630183
  • Title

    A 2.5–2.7GHz broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band application

  • Author

    Yoshimura, Norihiro ; Umeta, Hiroshi ; Watanabe, Naoki ; Deguchi, Hiroaki ; Ui, Norihiko

  • Author_Institution
    Yamanashi-Plant, Sumitomo Electr. Device Innovations, Inc., Yamanashi, Japan
  • fYear
    2012
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    A 40W average output power asymmetric Doherty power amplifier (PA) for 2.6GHz band was developed using broadband inverse class F GaN HEMTs. The Doherty PA was successfully designed for 2.5GHz-2.7GHz using simple small signal analysis with optimum load impedance obtained by load-pull measurement. To the main and peak amplifiers the saturated power of 105W and 160W GaN HEMTs were applied, respectively. The Doherty PA exhibited more than 54.3dBm(269W) saturated power and more than 45% drain efficiency with -52.5dBc ALCR at 8dB back-off point with 2-carrier W-CDMA signal over the wide frequency range of 2.5GHz-2.7GHz corrected by the digital predistortion (DPD) system. These excellent performances promise to be a good solution for 2.6GHz multi-band/multi-standard base-station transmitter system (BTS) such as FDD-LTE, TDD-LTE and WiMAX.
  • Keywords
    III-V semiconductors; code division multiple access; distortion; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; BTS; DPD system; Doherty PA; FDD-LTE; GaN; TDD-LTE; W-CDMA signal; WiMAX; asymmetric Doherty power amplifier; broadband inverse class F GaN HEMT; digital predistortion system; drain efficiency; frequency 2.5 GHz to 2.7 GHz; load-pull measurement; multiband application; multiband base-station transmitter system; multistandard base-station transmitter system; optimum load impedance; power 105 W; power 160 W; power 40 W; signal analysis; Broadband communication; Gallium nitride; HEMTs; Impedance; Power amplifiers; Power generation; Transmission line measurements; Doherty; GaN HEMT; LTE; WiMAX; asymmetric; digital predistortion(DPD); power amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4577-1119-0
  • Type

    conf

  • DOI
    10.1109/PAWR.2012.6174928
  • Filename
    6174928