Title :
Design and thermal analysis of SiGe HBT with non-uniform finger length and non-uniform finger spacing
Author :
Chen, Liang ; Zhang, Wan-Rong ; Jin, Dong-yue ; Xiao, Ying ; Wang, Ren-qing
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure power SiGe HBT, the maximum junction temperature of novel structure reduce significantly from 416.1K to 412K, the thermal resistance reduce from 154.8K/W to 149K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; thermal stability; ANSYS software; HBT; SiGe; emitter fingers; maximum junction temperature; multifinger power heterojunction bipolar transistor; nonuniform finger length; nonuniform finger spacing; thermal analysis; thermal stability; three-dimensional temperature distribution; Fingers; Heterojunction bipolar transistors; Junctions; Silicon germanium; Thermal resistance; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667384
