Title :
Investigation of ESD second breakdown TCAD simulation
Author :
Xiaowu, Cai ; Beiping, Yan ; Xiaoyong, Han
Author_Institution :
Hong Kong Appl. Sci. & Technol. Res. Inst. Co. Ltd. (ASTRI), Hong Kong, China
Abstract :
This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.
Keywords :
CMOS integrated circuits; electronic engineering computing; electrostatic discharge; technology CAD (electronics); CMOS technology; ESD second breakdown TCAD simulation; second breakdown point; size 0.5 mum; snapback curves; Electrostatic discharge; Integrated circuit modeling; Load modeling; Resistors; Silicon; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667387
